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June 1997
NDS332P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These P-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. These
devices are particularly suited for low voltage applications such as
notebook computer power management, portable electronics,
and other battery powered circuits where fast high-side
switching, and low in-line power loss are needed in a very small
outline surface mount package.
Features
-1 A, -20 V, R DS(ON) = 0.41 ? @ V GS = -2.7 V
R DS(ON) = 0.3 ? @ V GS = -4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V GS(th) < 1.0V.
Proprietary package design using copper lead frame for
superior thermal and electrical capabilities.
High density cell design for extremely low R DS(ON) .
Exceptional on-resistance and maximum DC current
capability.
Compact industry standard SOT-23 surface Mount
package.
________________________________________________________________________________
D
G
S
A solute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
NDS332P
-20
±8
Units
V
V
I D
Drain Current - Continuous
(Note 1a)
-1
A
- Pulsed
-10
P D
Maximum Power Dissipation
(Note 1a)
0.5
W
(Note 1b)
0.46
T J ,T STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
? 1997 Fairchild Semiconductor Corporation
NDS332P Rev. E
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相关代理商/技术参数
NDS332P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
NDS332P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SOT-23 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):410mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-600mV; No. of Pins:3 ;RoHS Compliant: Yes
NDS332P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:P CH MOSFET, -20V, 1A, SUPER SOT-3
NDS332P_D87Z 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS332P_Q 功能描述:MOSFET SOT-23 P-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS332P-CUT TAPE 制造商:FAIRCHILD 功能描述:NDS Sereis P-Channel 20V 0.3O Enhancement Mode Field Effect Transistor SSOT-3
NDS335 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS335N 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube